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| JMnic Product Specification Silicon PNP Power Transistors 2SA1332 DESCRIPTION With TO-220Fa package High VCEO APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -1.5 -0.15 20 150 -55~150 ae ae UNIT V V V A A W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IE=1mA , IC=0 IC=-0.5A, IB=-50mA IC=-0.1A ; VCE=-10V VCB=-160V, IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-10V IC=-0.1A ; VCE=-10V 60 200 MIN -160 -5 TYP. 2SA1332 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT MAX UNIT V V -1.5 -1.0 -1.0 -1.0 240 |I |I V V A A MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1332 Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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